Probing a single nuclear spin in a silicon single electron transistor
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http://hdl.handle.net/10045/25279
| Títol: | Probing a single nuclear spin in a silicon single electron transistor |
|---|---|
| Autors: | Delgado Acosta, Fernando | Aguado Sola, Ramón | Fernández-Rossier, Joaquín |
| Grups d'investigació o GITE: | Grupo de Nanofísica |
| Centre, Departament o Servei: | Universidad de Alicante. Departamento de Física Aplicada |
| Paraules clau: | Single electron transport | Single Bi dopant | Silicon nanotransistor | Bi nuclear spin |
| Àrees de coneixement: | Física de la Materia Condensada |
| Data de publicació: | 16-d’agost-2012 |
| Editor: | American Institute of Physics |
| Citació bibliogràfica: | DELGADO, F.; AGUADO, R.; FERNÁNDEZ-ROSSIER, J. "Probing a single nuclear spin in a silicon single electron transistor". Applied Physics Letters. Vol. 101, Issue 7 (2012). ISSN 0003-6951, pp. 072407-1/4 |
| Resum: | We study single electron transport across a single Bi dopant in a silicon nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin I = 9/2 affects the transport characteristics of the device. In the sequential tunneling regime we find that at, temperatures in the range of 100 mK, dI/dV curves reflect the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic spin just tuning the applied bias. |
| Patrocinadors: | This work has been financially supported by MECSpain (Grant Nos. FIS2010-21883-C02-01, FIS2009-08744, and CONSOLIDER CSD2007-0010) as well as Generalitat Valenciana, Grant Prometeo 2012-11. |
| URI: | http://hdl.handle.net/10045/25279 |
| ISSN: | 0003-6951 (Print) | 1077-3118 (Online) |
| DOI: | 10.1063/1.4746260 |
| Idioma: | eng |
| Tipus: | info:eu-repo/semantics/article |
| Drets: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Revisió científica: | si |
| Versió de l'editor: | http://dx.doi.org/10.1063/1.4746260 |
| Apareix a la col·lecció: | INV - Grupo de Nanofísica - Artículos de Revistas |
Arxius per aquest ítem:
| Arxiu | Descripció | Tamany | Format | |
|---|---|---|---|---|
 2012_ApplPhysLett.pdf | Pre-print | 425,51 kB | Adobe PDF | Obrir Vista prèvia |
 2012_ApplPhysLett_final.pdf | Versión final | 1,25 MB | Adobe PDF | Obrir Vista prèvia |
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