Probing a single nuclear spin in a silicon single electron transistor
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Título: | Probing a single nuclear spin in a silicon single electron transistor |
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Autor/es: | Delgado Acosta, Fernando | Aguado Sola, Ramón | Fernández-Rossier, Joaquín |
Grupo/s de investigación o GITE: | Grupo de Nanofísica |
Centro, Departamento o Servicio: | Universidad de Alicante. Departamento de Física Aplicada |
Palabras clave: | Single electron transport | Single Bi dopant | Silicon nanotransistor | Bi nuclear spin |
Área/s de conocimiento: | Física de la Materia Condensada |
Fecha de publicación: | 16-ago-2012 |
Editor: | American Institute of Physics |
Cita bibliográfica: | DELGADO, F.; AGUADO, R.; FERNÁNDEZ-ROSSIER, J. "Probing a single nuclear spin in a silicon single electron transistor". Applied Physics Letters. Vol. 101, Issue 7 (2012). ISSN 0003-6951, pp. 072407-1/4 |
Resumen: | We study single electron transport across a single Bi dopant in a silicon nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin I = 9/2 affects the transport characteristics of the device. In the sequential tunneling regime we find that at, temperatures in the range of 100 mK, dI/dV curves reflect the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic spin just tuning the applied bias. |
Patrocinador/es: | This work has been financially supported by MECSpain (Grant Nos. FIS2010-21883-C02-01, FIS2009-08744, and CONSOLIDER CSD2007-0010) as well as Generalitat Valenciana, Grant Prometeo 2012-11. |
URI: | http://hdl.handle.net/10045/25279 |
ISSN: | 0003-6951 (Print) | 1077-3118 (Online) |
DOI: | 10.1063/1.4746260 |
Idioma: | eng |
Tipo: | info:eu-repo/semantics/article |
Derechos: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
Revisión científica: | si |
Versión del editor: | http://dx.doi.org/10.1063/1.4746260 |
Aparece en las colecciones: | INV - Grupo de Nanofísica - Artículos de Revistas |
Archivos en este ítem:
Archivo | Descripción | Tamaño | Formato | |
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2012_ApplPhysLett.pdf | Pre-print | 425,51 kB | Adobe PDF | Abrir Vista previa |
2012_ApplPhysLett_final.pdf | Versión final | 1,25 MB | Adobe PDF | Abrir Vista previa |
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