Quantum Dot-Sensitized Solar Cells Based on Directly Adsorbed Zinc Copper Indium Sulfide Colloids
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Título: | Quantum Dot-Sensitized Solar Cells Based on Directly Adsorbed Zinc Copper Indium Sulfide Colloids |
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Autor/es: | Guijarro, Nestor | Guillén Rodríguez, Elena | Lana-Villarreal, Teresa | Gómez, Roberto |
Grupo/s de investigación o GITE: | Grupo de Fotoquímica y Electroquímica de Semiconductores (GFES) |
Centro, Departamento o Servicio: | Universidad de Alicante. Departamento de Química Física | Universidad de Alicante. Instituto Universitario de Electroquímica |
Palabras clave: | Quantum dots | Quantum dot-sensitized solar cells | Zinc copper indium sulfide | Colloids |
Área/s de conocimiento: | Química Física |
Fecha de publicación: | 26-mar-2014 |
Editor: | Royal Society of Chemistry |
Cita bibliográfica: | Physical Chemistry Chemical Physics. 2014, 16: 9115-9122. doi:10.1039/C4CP00294F |
Resumen: | Heavy metal-based quantum dots (QDs) have demonstrated to behave as efficient sensitizers in QD-sensitized solar cells (QDSSCs), as attested by the countless works and encouraging efficiencies reported so far. However, their intrinsic toxicity has arisen as a major issue for the prospects of commercialization. Here, we examine the potential of environmentally friendly zinc copper indium sulfide (ZCIS) QDs for the fabrication of liquid-junction QDSSCs by means of photoelectrochemical measurements. A straightforward approach to directly adsorb ZCIS QDs on TiO2 from a colloidal dispersion is presented. Incident photon-to-current efficiency (IPCE) spectra of sensitized photoanodes show a marked dependence on the adsorption time, with longer times leading to poorer performances. Cyclic voltammograms point to a blockage of the channels of the mesoporous TiO2 film by the agglomeration of QDs as the main reason for the decrease in efficiency. Photoanodes were also submitted to the ZnS treatment. Its effects on electron recombination with the electrolyte are analyzed through electrochemical impedance spectroscopy and photopotential measurements. The corresponding results bring out the role of the ZnS coating as a barrier layer preventing electron leakage toward the electrolyte, as argued in other QD-sensitized systems. The beneficial effect of the ZnS coating is ultimately reflected on the power conversion efficiency of complete devices, reaching values of 2 %. In a more general vein, through these findings, we aim to call the attention to the potentiality of this quaternary alloy, virtually unexplored as a light harvester for sensitized devices. |
Patrocinador/es: | N.G. is grateful to the Spanish Ministry of Education for the award of an FPU grant. The group acknowledges support of the Spanish Ministry of Economy and Competitiveness through projects HOPE CSD2007-00007 (Consolider Ingenio 2010) and MAT2012-37676 (Fondos FEDER). |
URI: | http://hdl.handle.net/10045/36483 |
ISSN: | 1463-9076 (Print) | 1463-9084 (Online) |
DOI: | 10.1039/C4CP00294F |
Idioma: | eng |
Tipo: | info:eu-repo/semantics/article |
Derechos: | This article is licensed under a Creative Commons Attribution 3.0 Unported Licence |
Revisión científica: | si |
Versión del editor: | http://dx.doi.org/10.1039/C4CP00294F |
Aparece en las colecciones: | INV - GFES - Artículos de Revistas |
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